TC75S201L6X 2012-11-19 1 pin assignment (top view) toshiba cmos linear integrat ed circuit silicon monolithic TC75S201L6X single comparator TC75S201L6X is a cmos type general-purpose single comparator. the device can operate a single power supply and a lower supply current than a conventional bipolar general-purpose comparator. this devices?s push-pull output stage can be directly connected to cmos logic ic?s. features z full-range input/output z small package z low input bias current z single power supply operation z low supply current: i dd = 20 a (typ.)@ v dd =3.0v z push-pull output circuit marking (top view) (mp6) weight:2.0 mg (typ.) vp product name 1 out 2 v ss v dd 6 nc 5 3 in(+) in(-) 4 - + lot no.
TC75S201L6X 2012-11-19 2 absolute maximum ratings characteristic symbol rating unit supply voltage v dd 2.3 or 4.6 v differential input voltage (1) v in 4.6 v input voltage v in v ss to v dd v output current i out 35 ma power dissipation p d 250 (note1) mw operating temperature t opr ? 40 to 85 c storage temperature t stg ? 55 to 125 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings and the operating ranges. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note: since this product sometimes brings about latch-up, which is peculiar to cmos devices, note the following points: ? don?t raise the voltage level of the output pins beyond v dd , nor lower it below v ss . consider the timing for power supply, too. ? don?t let any abnormal noise enter the device. note 1: mounted on an fr4 board. operating ranges (ta = 25c) characteristic symbol rating unit v dd 1.5 to 4.6 supply voltage v dd , v ss 0.75 to 2.3 v
TC75S201L6X 2012-11-19 3 electrical characteristics (v dd = 3.0v, v ss = gnd, ta = 25c) characteristic symbol test condition min typ. max unit input offset voltage v io D D 1 6 mv input offset current i io D D 1 D pa input bias current i i D D 1 D pa common-mode input voltage range v icm D 0 D 3.0 v supply current i dd (note) D D 20 44 a sink current i sink v ol = 0.5v 6 18 D ma source current i source v oh = 2.5v 3 15 D ma high-level output voltage v ol i sink = 5.0 ma D 0.15 0.35 low-level output voltage v oh i source = 5.0 ma 2.65 2.85 D v propagation delay time (l/h) t plh over drive = 100mv D 600 D ns propagation delay time (h/l) t phl over drive = 100mv D 1000 D ns t tlh over drive = 100mv D 30 D response time t thl over drive = 100mv D 24 D ns (note): since this product causes an increase in current c onsumption with a rise in operational frequency, make sure that power consumption does not ex ceed the allowable dissipation. electrical characteristics (v dd = 1.8v, v ss = gnd, ta = 25c) characteristic symbol test condition min typ. max unit input offset voltage v io D D 1 6 mv input offset current i io D D 1 D pa input bias current i i D D 1 D pa common-mode input voltage range v icm D 0 D 1.8 v supply current i dd (note) D D 17 40 a sink current i sink v ol = 0.5 v 3.0 8.0 D ma source current i source v oh = 1.3 v 1.0 6.4 D ma high-level output voltage v ol i sink = 3.0ma D 0.15 0.35 low-level output voltage v oh i source = 3.0ma 1.45 1.65 D v propagation delay time (l/h) t plh over drive = 100mv D 590 D propagation delay time (h/l) t phl over drive = 100mv D 1000 D ns t tlh over drive = 100mv D 26 D response time t thl over drive = 100mv D 33 D ns (note): since this product causes an increase in current c onsumption with a rise in operational frequency, make sure that power consumption does not ex ceed the allowable dissipation.
TC75S201L6X 2012-11-19 4 electrical characteristics (v dd = 1.5v, v ss = gnd, ta = 25c) characteristic symbol test condition min typ. max unit input offset voltage v io D D 1 6 mv input offset current i io D D 1 D pa input bias current i i D D 1 D pa common-mode input voltage range v icm D 0 D 1.5 v supply current i dd (note) D D 18 36 a sink current i sink v ol = 0.5 v 1.0 5.9 D ma source current i source v oh = 1.0 v 0.5 4.3 D ma high-level output voltage v ol i sink = 1.5ma D 0.15 0.35 low-level output voltage v oh i source = 1.5ma 1.15 1.35 D v propagation delay time (l/h) t plh over drive = 100mv D 600 D propagation delay time (h/l) t phl over drive = 100mv D 1000 D ns t tlh over drive = 100mv D 30 D response time t thl over drive = 100mv D 42 D ns (note): since this product causes an increase in current c onsumption with a rise in operational frequency, make sure that power consumption does not ex ceed the allowable dissipation.
TC75S201L6X 2012-11-19 5 v ol ? i sink v ol ? i sink sink current i sink (ma) low-level output voltage voltage v ol (v) 0 2.0 1.5 3.0 1.0 2.5 sink current i sink (ma) low-level output voltage voltage v ol (v) 0 source current i source (ma) high-level output voltage voltage v o (v) 0 2.0 1.5 3.0 1.0 2.5 source current i source (ma) high-level output voltage voltage v o (v) source current i source (ma) high-level output voltage voltage v o (v) 0 2.0 1.5 3.0 1.0 2.5 0 2.0 1.5 3.0 0.5 2.5 v oh ? i source 0 10 30 20 15 25 1.0 10 0.5 0 2 vdd = 1.5v vss = gnd ta = 25 c 4 6 8 0 4 10 2.0 1.5 3.0 1.0 2.5 6 8 vdd = 1.8v vss = gnd ta = 25 c 2 0.5 v ol ? i sink sink current i sink (ma) low-level output voltage voltage v ol (v) 0 0 10 30 2.0 1.5 3.0 1.0 2.5 15 20 vdd = 3.0v vss = gnd ta = 25 c 5 25 0.5 v oh ? i source 0 2 10 6 vdd = 1.5v vss = gnd ta = 25 c 4 8 0.5 v oh ? i source 0 2 10 6 vdd = 1.8v vss = gnd ta = 25 c 4 8 0.5 vdd = 3.0v vss = gnd ta = 25 c 5
TC75S201L6X 2012-11-19 6 package dimensions weight : 2.0 mg (typ.) unit: mm
TC75S201L6X 2012-11-19 7 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the "toshiba semiconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? 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